bi direction esd protection diode rsb5.6sm l applications l dimensions (unit : mm) l land size figure (unit : mm) esd protection l features 1)ultra small mold type. (emd2) 2)bi direction high reliability. 3)high reliability. 4)by chip-mounter,automatic mounting is possible. l construction l structure silicon epitaxial planar l absolute maximum ratings (ta=25 ? c) symbol unit ppk w p mw tj ? c tstg ? c topor ? c l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions v z 4.76 - 6.44 v i z =1ma i r - - 1.0 a v r =2.5v ct - 50.0 - pf v r =0v , f=1mhz parameter zener voltage reverse current capacitance between terminals junction temperature 150 storage temperature - 55 to + 150 operation temperature range - 55 to + 150 l taping dimensions (unit : mm) parameter limits peak pulse power(tp=101000s) 10 power dissipation 150 emd2 rohm : emd2 jeita : sc - 79 jedec :sod - 523 dot (year week factory) dot (productno.) 1.20.05 1.60.1 0.120.05 0.60.1 0.30.05 0.80.05 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 0.8 1.7 0.6
rsb5.6sm 0.001 0.01 0.1 1 10 2 3 4 5 6 ta= - 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(1) apply voltage 0.001 0.01 0.1 1 10 2 3 4 5 6 ta= - 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(2) apply voltage 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 0 1 2 3 ta=125 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics(1) apply voltage 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 0 1 2 3 ta=125 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics(2) apply voltage 10 100 0 1 2 3 4 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(1) f=1mhz apply voltage 10 100 0 1 2 3 4 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(2) f=1mhz apply voltage 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb5.6sm 4.0 4.5 5.0 5.5 6.0 zener voltage:vz( ) ta=25 c i z =1ma n=30pcs ave:5.437v vz dispersion map ave:5.486v apply voltage apply voltage 70 80 90 100 110 120 reverse current:i r (na) ta=25 c v r =2.5v n=30pcs ave:114.0na i r dispersion map apply voltage apply voltage ave:96.0na 0 10 20 30 40 50 60 70 80 90 100 capacitance between terminals:ct(pf) ta=25 c f=1mhz v r =0v n=10pcs ct dispersion map ave 53.70pf ave 51.38pf apply voltage apply voltage 10 100 1000 10000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(1) apply voltage 10 100 1000 10000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(2) apply voltage 10 100 1000 0.001 0.01 0.1 1 10 100 1000 transient thermal impedance rth ( c/w) time(s) rth - characteristics rth(j - a) rth(j - c) on glass - epoxy substrate 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb5.6sm 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 10.0kv electrostatic discharge test esd [kv] esd dispersion map(1) apply voltage 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 9.35kv electrostatic discharge test esd [kv] esd dispersion map(2) apply voltage 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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